27 March 2017 DSA patterning options for logics and memory applications
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Abstract
The progress of three potential DSA applications, i.e. fin formation, via shrink, and pillars, were reviewed in this paper. For fin application, in addition to pattern quality, other important considerations such as customization and design flexibility were discussed. An electrical viachain study verified the DSA rectification effect on CD distribution by showing a tighter current distribution compared to that derived from the guiding pattern direct transfer without using DSA. Finally, a structural demonstration of pillar formation highlights the importance of pattern transfer in retaining both the CD and local CDU improvement from DSA. The learning from these three case studies can provide perspectives that may not have been considered thoroughly in the past. By including more important elements during DSA process development, the DSA maturity can be further advanced and move DSA closer to HVM adoption.
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Chi-Chun Liu, Chi-Chun Liu, Elliott Franke, Elliott Franke, Yann Mignot, Yann Mignot, Scott LeFevre, Scott LeFevre, Stuart Sieg, Stuart Sieg, Cheng Chi, Cheng Chi, Luciana Meli, Luciana Meli, Doni Parnell, Doni Parnell, Kristin Schmidt, Kristin Schmidt, Martha Sanchez, Martha Sanchez, Lovejeet Singh, Lovejeet Singh, Tsuyoshi Furukawa, Tsuyoshi Furukawa, Indira Seshadri, Indira Seshadri, Ekmini Anuja De Silva, Ekmini Anuja De Silva, Hsinyu Tsai, Hsinyu Tsai, Kafai Lai, Kafai Lai, Hoa Truong, Hoa Truong, Richard Farrell, Richard Farrell, Robert Bruce, Robert Bruce, Mark Somervell, Mark Somervell, Daniel Sanders, Daniel Sanders, Nelson Felix, Nelson Felix, John Arnold, John Arnold, David Hetzer, David Hetzer, Akiteru Ko, Akiteru Ko, Andrew Metz, Andrew Metz, Matthew Colburn, Matthew Colburn, Daniel Corliss, Daniel Corliss, } "DSA patterning options for logics and memory applications", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014603 (27 March 2017); doi: 10.1117/12.2260479; https://doi.org/10.1117/12.2260479
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