27 March 2017 A numeric model for the imaging mechanism of metal oxide EUV resists
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Abstract
A numeric model is proposed describing the chemical and physical mechanisms governing image formation in metaloxide (MOx) EUV photoresist systems. Experimental measurements of physical and chemical properties are used to develop a quantitative representation of the chemical and physical state of the MOx resist film at each step in the lithographic process. The role of radiation-induced condensation to drive non-linear changes in development rate is elucidated. Lithographic performance parameters are predicted and compared with experimental results.
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W. D. Hinsberg, S. Meyers, "A numeric model for the imaging mechanism of metal oxide EUV resists", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014604 (27 March 2017); doi: 10.1117/12.2260265; https://doi.org/10.1117/12.2260265
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