27 March 2017 Difference in EUV photoresist design towards reduction of LWR and LCDU
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Abstract
Pattern fidelity of EUV lithography is crucial for high resolution features, since small variation can affect device performance and even cause short or open circuit. For 1D features, dense lines and contact holes are the most common features for active, metal and contact layer, therefore line width roughness (LWR) and local critical dimension uniformity (LCDU) are important indexes to monitor. Both LWR and LCDU are greatly influenced by photon and acid shot noise. In addition, LWR is also affected by resist mechanical properties, like pattern collapse. In this study, we studied the influence of different chemically amplified resist components, such as polymer, PAG and quencher for both types and concentrations in order to understand the relative extent of influences of deprotection, acid diffusion, and base neutralization on pattern fidelity. However, conventional methods to approach higher resolution or low LWR/LCDU by sacrificing the dose are not sustainable. In order to continue to improve resist performance, a new component, metal salt sensitizer, is introduced into the resist system. This metal salt is able to achieve 30% dose reduction by increasing EUV absorption, maintaining LWR. We believe metal sensitizer might give us a new way to challenge the RLS trade-off.
Conference Presentation
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Jing Jiang, Danilo De Simone, Geert Vandenberghe, "Difference in EUV photoresist design towards reduction of LWR and LCDU", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460A (27 March 2017); doi: 10.1117/12.2257899; https://doi.org/10.1117/12.2257899
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