27 March 2017 Embedded top-coat for reducing the effect out of band radiation in EUV lithography
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Abstract
Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure
Conference Presentation
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Ke Du, Ke Du, Meiliana Siauw, Meiliana Siauw, David Valade, David Valade, Marek Jasieniak, Marek Jasieniak, Nico Voelcker, Nico Voelcker, Peter Trefonas, Peter Trefonas, Jim Thackeray, Jim Thackeray, Idriss Blakey, Idriss Blakey, Andrew Whittaker, Andrew Whittaker, } "Embedded top-coat for reducing the effect out of band radiation in EUV lithography", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460D (27 March 2017); doi: 10.1117/12.2270480; https://doi.org/10.1117/12.2270480
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