27 March 2017 Challenges and progress in low defectivity for advanced ArF and EUV lithography processes using surface localized material technology
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Abstract
The main challenge in ArF lithography is to reduce cost of ownership (CoO) because increase in multi-patterning process is generally required to obtain a fine pattern. As a consequence, industry strongly requires ArF lithography process with a fast scan speed scanner and low defectivity material for CoO. The breakthrough technology to improve defectivity and resolution simultaneously was the polarity-change property of film surface from hydrophobic to hydrophilic after alkaline development process because a property after development process should be only associated with defectivity, not fast scan speed. The materials with high polarity change function were explored to EUV process to achieve low defectivity with good lithography performances.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michihiro Shirakawa, Michihiro Shirakawa, Hideaki Tsubaki, Hideaki Tsubaki, Hajime Furutani, Hajime Furutani, Wataru Nihashi, Wataru Nihashi, Naohiro Tango, Naohiro Tango, Kazuhiro Marumo, Kazuhiro Marumo, Kei Yamamoto, Kei Yamamoto, Hidenori Takahashi, Hidenori Takahashi, Akiyoshi Goto, Akiyoshi Goto, Mitsuhiro Fujita, Mitsuhiro Fujita, } "Challenges and progress in low defectivity for advanced ArF and EUV lithography processes using surface localized material technology", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460E (27 March 2017); doi: 10.1117/12.2257956; https://doi.org/10.1117/12.2257956
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