18 April 2017 Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography
Author Affiliations +
The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction can be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists.
Conference Presentation
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William Earley, William Earley, Deanna Soucie, Deanna Soucie, Kenji Hosoi, Kenji Hosoi, Arata Takahashi, Arata Takahashi, Takashi Aoki, Takashi Aoki, Brian Cardineau, Brian Cardineau, Koichi Miyauchi, Koichi Miyauchi, Jay Chun, Jay Chun, Michael O'Sullivan, Michael O'Sullivan, Robert Brainard, Robert Brainard, } "Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460H (18 April 2017); doi: 10.1117/12.2258324; https://doi.org/10.1117/12.2258324

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