18 April 2017 Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography
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Abstract
The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction can be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists.
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William Earley, Deanna Soucie, Kenji Hosoi, Arata Takahashi, Takashi Aoki, Brian Cardineau, Koichi Miyauchi, Jay Chun, Michael O'Sullivan, Robert Brainard, "Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460H (18 April 2017); doi: 10.1117/12.2258324; https://doi.org/10.1117/12.2258324
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