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18 April 2017 Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography
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The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction can be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William Earley, Deanna Soucie, Kenji Hosoi, Arata Takahashi, Takashi Aoki, Brian Cardineau, Koichi Miyauchi, Jay Chun, Michael O'Sullivan, and Robert Brainard "Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460H (18 April 2017);

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