27 March 2017 Lamellar orientation of block copolymer using polarity switch of nitrophenyl self-assembled monolayer induced by electron beam
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Abstract
Directed self-assembly (DSA) was investigated on self-assembled monolayers (SAMs) of 6-(4-nitrophenoxy) hexane-1-thiol (NPHT), which were chemically modified by electron beam (EB) irradiation. By irradiating a responsive interfacial surface, the orientation and selective patterning of block copolymer domains could be achieved. We demonstrated that spatially-selective lamellar orientation of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) could be induced via modification of an underlying SAM; for instance the conversion of an NO2 group to an NH2 group, induced by EB. The lamellar orientation of PS-b-PMMA was controlled by the change in the polarity of different regions of the SAM using EB lithography. The reductive treatment of SAM substrates plays a crucial role in the orientation of block copolymer. This method might greatly simplify block copolymer DSA processes as compared to the conventional multi-step chemo-epitaxy DSA process. By examining the lamellae orientation by EB, we found that the vertical orientation persists only for appropriate an irradiation dose and annealing temperature.
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Hiroki Yamamoto, Guy Dawson, Takahiro Kozawa, Alex P. G. Robinson, "Lamellar orientation of block copolymer using polarity switch of nitrophenyl self-assembled monolayer induced by electron beam", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014613 (27 March 2017); doi: 10.1117/12.2257953; https://doi.org/10.1117/12.2257953
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