27 March 2017 Investigation on spin-on hard mask integration
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Abstract
For fine patterning, there are two possible hard mask integration schemes: quad-layer and tri-layer systems. Due to the different structures and processes between quad- and tri- layer systems, each system needs specific chemical and physical properties of the hard mask. In this paper, we report the properties of the carbon-based spin-on hard mask (CSOH) candidates for various hard mask integrations.
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Yushin Park, Yushin Park, Seungwook Shin, Seungwook Shin, Yunjun Kim, Yunjun Kim, Seunghyun Kim, Seunghyun Kim, Jaebum Lim, Jaebum Lim, Sung Hwan Kim, Sung Hwan Kim, Hyeonil Jung, Hyeonil Jung, Chungheon Lee, Chungheon Lee, Miyeon Han, Miyeon Han, Sanghak Lim, Sanghak Lim, Jeong Yun Yu, Jeong Yun Yu, } "Investigation on spin-on hard mask integration", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014616 (27 March 2017); doi: 10.1117/12.2257846; https://doi.org/10.1117/12.2257846
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