27 March 2017 Novel gap filling BARC with high chemical resistance
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Abstract
In the recent of the semiconductor manufacturing process, variety of properties (narrow gap-filling and planarity etc.) are required to organic BARC in addition to the conventional requirements. Moreover, SC-1 resistance is also needed because BARC is often used as a wet etching mask when TiN processing. But conventional BARC which include crosslinker doesn’t have enough SC-1 resistance, and we found that it is also difficult to obtain good gap-filling and good planarity because of outgassing and film shrinkage derived from the crosslinker. In this study, we have developed the new self-crosslinking BARC. The new crosslinking system shows low outgassing and film shrinkage because of not including crosslinker. So, novel BARC has better gap filling property and planarity and over 3 times higher SC-1 resistance than that of conventional BARC. Moreover, by adding the low molecular weight additive which has high adhesive unit to TiN surface, the novel BARC has over 10 times higher SC-1 resistance than that of conventional BARC. And this novel BARC can be applied both ArF and KrF lithography process because of broad absorbance, high etching rate, chemical resistance (SC-1, SC-2, DHF, and others) and good film thickness uniformity. In this paper, we will discuss the detail of new self-crosslinking BARC in excellent total performance and our approach to achieve high chemical resistance.
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Hiroto Ogata, Hiroto Ogata, Yuto Hashimoto, Yuto Hashimoto, Yuki Usui, Yuki Usui, Mamoru Tamura, Mamoru Tamura, Tomoya Ohashi, Tomoya Ohashi, Yasushi Sakaida, Yasushi Sakaida, Takahiro Kishioka, Takahiro Kishioka, } "Novel gap filling BARC with high chemical resistance", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014617 (27 March 2017); doi: 10.1117/12.2257664; https://doi.org/10.1117/12.2257664
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