27 March 2017 High-resolution, high-throughput, CMOS-compatible electron-beam patterning
Author Affiliations +
Abstract
Two scanning electron beam lithography (SEBL) patterning processes have been developed, one positive and one negative tone. The processes feature nanometer-scale resolution, chemical amplification for faster throughput, long film life under vacuum, and sufficient etch resistance to enable patterning of a variety of materials with a metal-free (CMOS/MEMS compatible) tool set. These resist processes were developed to address two limitations of conventional SEBL resist processes: (1) low areal throughput and (2) limited compatibility with the traditional microfabrication infrastructure.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Melissa A. Smith, Steven A. Vitale, Theodore H. Fedynyshyn, Matthew T. Cook, Joel Maldonado, Dmitri Shapiro, Mordechai Rothschild, "High-resolution, high-throughput, CMOS-compatible electron-beam patterning", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461H (27 March 2017); doi: 10.1117/12.2256649; https://doi.org/10.1117/12.2256649
PROCEEDINGS
10 PAGES


SHARE
Back to Top