27 March 2017 High-resolution, high-throughput, CMOS-compatible electron-beam patterning
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Abstract
Two scanning electron beam lithography (SEBL) patterning processes have been developed, one positive and one negative tone. The processes feature nanometer-scale resolution, chemical amplification for faster throughput, long film life under vacuum, and sufficient etch resistance to enable patterning of a variety of materials with a metal-free (CMOS/MEMS compatible) tool set. These resist processes were developed to address two limitations of conventional SEBL resist processes: (1) low areal throughput and (2) limited compatibility with the traditional microfabrication infrastructure.
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Melissa A. Smith, Melissa A. Smith, Steven A. Vitale, Steven A. Vitale, Theodore H. Fedynyshyn, Theodore H. Fedynyshyn, Matthew T. Cook, Matthew T. Cook, Joel Maldonado, Joel Maldonado, Dmitri Shapiro, Dmitri Shapiro, Mordechai Rothschild, Mordechai Rothschild, } "High-resolution, high-throughput, CMOS-compatible electron-beam patterning", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461H (27 March 2017); doi: 10.1117/12.2256649; https://doi.org/10.1117/12.2256649
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