27 March 2017 Study for new hardmask process scheme
Author Affiliations +
Abstract
Hardmask processes are a key technique to enable low-k semiconductors, but they can have an impact on patterning control, influencing defectivity, alignment, and overlay. Specifically, amorphous carbon layer (ACL) hardmask schemes can negatively affect overlay by creating distorted alignment signals. A new scheme needs to be developed that can be inserted where amorphous carbon is used but provide better alignment performance. Typical spin-on carbon (SOC) materials used in other hardmask schemes have issues with DCD-FCD skew. In this paper we will evaluate new spin-on carbon material with a higher carbon content that could be a candidate to replace amorphous carbon.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daeyoup Lee, Daeyoup Lee, Phillip Tatti, Phillip Tatti, Richard Lee, Richard Lee, Jack Chang, Jack Chang, Winston Cho, Winston Cho, Sanggil Bae, Sanggil Bae, } "Study for new hardmask process scheme", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461L (27 March 2017); doi: 10.1117/12.2258099; https://doi.org/10.1117/12.2258099
PROCEEDINGS
5 PAGES


SHARE
Back to Top