27 March 2017 Study for new hardmask process scheme
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Hardmask processes are a key technique to enable low-k semiconductors, but they can have an impact on patterning control, influencing defectivity, alignment, and overlay. Specifically, amorphous carbon layer (ACL) hardmask schemes can negatively affect overlay by creating distorted alignment signals. A new scheme needs to be developed that can be inserted where amorphous carbon is used but provide better alignment performance. Typical spin-on carbon (SOC) materials used in other hardmask schemes have issues with DCD-FCD skew. In this paper we will evaluate new spin-on carbon material with a higher carbon content that could be a candidate to replace amorphous carbon.
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Daeyoup Lee, Daeyoup Lee, Phillip Tatti, Phillip Tatti, Richard Lee, Richard Lee, Jack Chang, Jack Chang, Winston Cho, Winston Cho, Sanggil Bae, Sanggil Bae, } "Study for new hardmask process scheme", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461L (27 March 2017); doi: 10.1117/12.2258099; https://doi.org/10.1117/12.2258099

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