27 March 2017 Orientation control of silicon containing block-co-polymer with resolution beyond 10nm
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Directed Self-Assembly (DSA) process is one of the attractive processes for creating the very fine pitch pattern. In this technology, block-co-polymer is the key material to achieve a fine patterning. Many reports are published with Polystyrene-b-Polymethylmethacrylate (PS-b-PMMA) for DSA applications. But it is difficult to achieve the resolution below 10 nm with PS-b-PMMA because of its low chi value. Etching transfer of PS-b-PMMA is also the key issue due to the low etching selectivity between PS and PMMA during dry etching process. In this report, block-co-polymers that include a Si-containing monomer and an organic monomer were synthesized by living anionic polymerization to supply a high resolution and a high etching contrast. These polymers with a low polydispersity demonstrated lamella morphology that can be oriented by thermal annealing with a neutral surface treatment. The effects of underlayer and top-coat materials were investigated to control the block-co-polymer orientation. These block-co-polymers also achieve a high dry etching contrast.
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Yasunobu Someya, Yasunobu Someya, Ryuta Mizuochi, Ryuta Mizuochi, Hiroyuki Wakayama, Hiroyuki Wakayama, Shinsuke Tadokoro, Shinsuke Tadokoro, Masami Kozawa, Masami Kozawa, Rikimaru Sakamoto, Rikimaru Sakamoto, } "Orientation control of silicon containing block-co-polymer with resolution beyond 10nm", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461Y (27 March 2017); doi: 10.1117/12.2258145; https://doi.org/10.1117/12.2258145

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