Study of flowability effect on self-planarization performance at SOC materials

Huichan Yun; Jinhyung Kim; Youjung Park; Yoona Kim; Seulgi Jeong; Jaeyeol Baek; Byeri Yoon; Sanghak Lim

doi:10.1117/12.2257880

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27 March 2017 Study of flowability effect on self-planarization performance at SOC materials

Huichan Yun, Jinhyung Kim, Youjung Park, Yoona Kim, Seulgi Jeong, Jaeyeol Baek, Byeri Yoon, Sanghak Lim

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Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 1014624 (2017) https://doi.org/10.1117/12.2257880
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

For multilayer process, importance of carbon-based spin-on hardmask material that replaces amorphous carbon layer (ACL) is ever increasing. Carbon-based spin-on hardmask is an organic polymer with high carbon content formulated in organic solvents for spin-coating application that is cured through baking. In comparison to CVD process for ACL, carbon-based spin-on hardmask material can offer several benefits: lower cost of ownership (CoO) and improved process time, as well as better gap-fill and planarization performances. Thus carbon-based spin-on hardmask material of high etch resistance, good gap-fill properties and global planarization performances over various pattern topographies are desired to achieve the fine patterning and high aspect ratio (A/R). In particular, good level of global planarization of spin coated layer over the underlying pattern topographies is important for self-aligned double patterning (SADP) process as it dictates the photolithographic margin. Herein, we report a copolymer carbon-based spin-on hardmask resin formulation that exhibits favorable film shrinkage profile and good etch resistance properties. By combining the favorable characteristics of each resin – one resin with good shrinkage property and the other with excellent etch resistance into the copolymer, it was possible to achieve a carbonbased spin-on hardmask formulation with desirable level of etch resistance and the planarization performances across various underlying substrate pattern topographies.

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Huichan Yun, Jinhyung Kim, Youjung Park, Yoona Kim, Seulgi Jeong, Jaeyeol Baek, Byeri Yoon, and Sanghak Lim "Study of flowability effect on self-planarization performance at SOC materials", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014624 (27 March 2017); https://doi.org/10.1117/12.2257880

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