27 March 2017 Advanced lithographic filtration and contamination control for 14nm node and beyond semiconductor processes
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Abstract
Two versions of a specific 2nm rated filter containing filtration medium and all other components produced from high density polyethylene (HDPE), one subjected to standard cleaning, the other to specialized ultra-cleaning, were evaluated in terms of their cleanliness characteristics, and also defectivity of wafers processed with photoresist filtered through each. With respect to inherent cleanliness, the ultraclean version exhibited a 70% reduction in total metal extractables and 90% reduction in organics extractables compared to the standard clean version. In terms of particulate cleanliness, the ultraclean version achieved stability of effluent particles 30nm and larger in about half the time required by the standard clean version, also exhibiting effluent levels at stability almost 90% lower. In evaluating defectivity of blanket wafers processed with photoresist filtered through either version, initial defect density while using the ultraclean version was about half that observed when the standard clean version was in service, with defectivity also falling more rapidly during subsequent usage of the ultraclean version compared to the standard clean version. Similar behavior was observed for patterned wafers, where the enhanced defect reduction was primarily of bridging defects. The filter evaluation and actual process-oriented results demonstrate the extreme value in using filtration designed possessing the optimal intrinsic characteristics, but with further improvements possible through enhanced cleaning processes
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Rao Varanasi, Rao Varanasi, Michael Mesawich, Michael Mesawich, Patrick Connor, Patrick Connor, Lawrence Johnson, Lawrence Johnson, } "Advanced lithographic filtration and contamination control for 14nm node and beyond semiconductor processes", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101462B (27 March 2017); doi: 10.1117/12.2260001; https://doi.org/10.1117/12.2260001
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