Proceedings Volume 10147 is from: Logo
SPIE ADVANCED LITHOGRAPHY
Feb 26 - Mar 2 2017
San Jose, California, United States
Front Matter: Volume 10147
Proc. SPIE 10147, Front Matter: Volume 10147, 1014701(12 April 2017);doi: 10.1117/12.2277795
Pushing Optical Limits
Proc. SPIE 10147, EPE improvement thru self-alignment via multi-color material integration, 1014704(26 April 2017);doi: 10.1117/12.2258108
Proc. SPIE 10147, In-design and signoff lithography physical analysis for 7/5nm (Erratum), 1014705(30 March 2017);doi: 10.1117/12.2263861
Proc. SPIE 10147, Using heuristic optimization to set SRAF rules, 1014706(24 March 2017);doi: 10.1117/12.2258233
Proc. SPIE 10147, The impact of lower light source bandwidth on sub-10nm process node features, 1014707(30 March 2017);doi: 10.1117/12.2260210
Image and Process Control
Proc. SPIE 10147, Computational microscopy (Conference Presentation), 1014708();doi: 10.1117/12.2261296
Proc. SPIE 10147, Process margin improvement through finger-print removal based on scanner leveling data, 1014709(11 April 2017);doi: 10.1117/12.2258184
Proc. SPIE 10147, Reduction and control of intrafield focus variation on 7nm technology (Conference Presentation), 101470B();doi: 10.1117/12.2258391
Proc. SPIE 10147, 450mm lithography status for high volume manufacturing, 101470C(24 March 2017);doi: 10.1117/12.2257633
Proc. SPIE 10147, Will conventional E95% spectral indicator last forever? (Conference Presentation), 101470D();doi: 10.1117/12.2257955
3D Resist Effects and Modeling: Joint Session with Conferences 10146 and 10147
Proc. SPIE 10147, Molecular force modeling of lithography (Conference Presentation), 101470E();doi: 10.1117/12.2257363
Proc. SPIE 10147, Experimental characterization of NTD resist shrinkage, 101470F(24 March 2017);doi: 10.1117/12.2256568
Proc. SPIE 10147, Investigation of 3D photoresist profile effect in self-aligned patterning through virtual fabrication, 101470G(24 March 2017);doi: 10.1117/12.2258157
Litho Etch Process Interaction: Joint Session with Conferences 10147 and 10149
Proc. SPIE 10147, Reducing the impact of etch-induced pattern shift on overlay by using lithography and etch tool corrections, 101470H(24 March 2017);doi: 10.1117/12.2260000
Proc. SPIE 10147, Optimal structure sampling for etch model calibration, 101470I(24 March 2017);doi: 10.1117/12.2257994
Proc. SPIE 10147, Interlayer verification methodology for multi-patterning processes, 101470J(28 March 2017);doi: 10.1117/12.2258356
Computational Lithography I
Proc. SPIE 10147, Accurate lithography simulation model based on convolutional neural networks, 101470K(30 March 2017);doi: 10.1117/12.2257871
Proc. SPIE 10147, Full chip hierarchical inverse lithography: a solution with perfect symmetry, 101470L(24 March 2017);doi: 10.1117/12.2257608
Proc. SPIE 10147, Source defect impact on pattern shift, 101470M(24 March 2017);doi: 10.1117/12.2257674
Proc. SPIE 10147, Image contrast enhancement of multiple patterning features through lower light source bandwidth, 101470N(30 March 2017);doi: 10.1117/12.2263228
Proc. SPIE 10147, Automated detection and classification of printing sub-resolution assist features using machine learning algorithms, 101470O(24 March 2017);doi: 10.1117/12.2261417
Design Interactions with Lithography: Joint Session with Conferences 10147 and 10148
Proc. SPIE 10147, Decomposition of the TCC using non-coherent kernels for faster calculation of lithographic images, 101470P(30 March 2017);doi: 10.1117/12.2261223
Proc. SPIE 10147, Resist 3D aware mask solution with ILT for hotspot repair, 101470Q(24 March 2017);doi: 10.1117/12.2257962
Proc. SPIE 10147, Enhanced OPC recipe coverage and early hotspot detection through automated layout generation and analysis, 101470R(24 March 2017);doi: 10.1117/12.2260769
Non-IC Applications
Proc. SPIE 10147, 3D printed complex microoptics: A new paradigm in optics manufacturing (Conference Presentation), 101470S();doi: 10.1117/12.2263349
Proc. SPIE 10147, A physical model for innovative laser direct write lithography, 101470T(24 March 2017);doi: 10.1117/12.2261093
Proc. SPIE 10147, Performance analyses of plasmonic lithography, 101470U(28 March 2017);doi: 10.1117/12.2257912
Proc. SPIE 10147, Analyses of line-edge roughness in plasmonic lithography (Conference Presentation), 101470V();doi: 10.1117/12.2258060
Proc. SPIE 10147, Neuroelectronic device process development and challenge, 101470W(24 March 2017);doi: 10.1117/12.2256297
Computational Lithography II
Proc. SPIE 10147, Exposure source error and model source error impact on optical proximity correction, 101470X(30 March 2017);doi: 10.1117/12.2258055
Proc. SPIE 10147, Effective use of aerial image metrology for calibration of OPC models, 101470Y(24 March 2017);doi: 10.1117/12.2258632
Proc. SPIE 10147, Accurate characterization of 2D etch bias by capturing surrounding effects from resist and trench areas, 101470Z(24 March 2017);doi: 10.1117/12.2258702
Proc. SPIE 10147, Design grid optimization for OPC of silicon photonics (Conference Presentation), 1014710();doi: 10.1117/12.2261428
Proc. SPIE 10147, Si-photonics waveguides manufacturability using advanced RET solutions, 1014711(24 March 2017);doi: 10.1117/12.2257906
Overlay Optimization
Proc. SPIE 10147, Overlay statistics for multiple exposure patterning, 1014712(28 March 2017);doi: 10.1117/12.2258682
Proc. SPIE 10147, Experimental verification of on-product overlay improvement by intra-lot overlay control using metrology based grouping, 1014713(24 March 2017);doi: 10.1117/12.2259846
Proc. SPIE 10147, FinFET-induced anisotropy in printing of implantation shapes, 1014715(24 March 2017);doi: 10.1117/12.2258346
Toolings
Proc. SPIE 10147, On-product overlay improvement with an enhanced alignment system, 1014716(24 March 2017);doi: 10.1117/12.2257659
Proc. SPIE 10147, Reticle heating feed-forward control (RHC2) on NXT:1980Di immersion scanner for enhanced on-product overlay, 1014717(24 March 2017);doi: 10.1117/12.2259792
Proc. SPIE 10147, Next-generation DUV light source technologies for 10nm and below, 1014718(30 March 2017);doi: 10.1117/12.2260319
Proc. SPIE 10147, The ArF laser for the next generation multiple-patterning immersion lithography supporting green operations and leading edge processes, 1014719(24 March 2017);doi: 10.1117/12.2257959
Proc. SPIE 10147, Layout independent leveling (LIL) on NXT:1980Di immersion scanners for enhanced productivity, 101471A(24 March 2017);doi: 10.1117/12.2259794
Latest News
Proc. SPIE 10147, Immersion lithography scanner resolution performance demonstration on 450mm substrates, 101471B(24 March 2017);doi: 10.1117/12.2257642
Proc. SPIE 10147, Computational scanner wafer mark alignment, 101471C(30 March 2017);doi: 10.1117/12.2259750
Poster Session
Proc. SPIE 10147, Machine learning-based 3D resist model, 101471D(30 March 2017);doi: 10.1117/12.2257904
Proc. SPIE 10147, Improving the topography performance of ion implantation resist, 101471E(24 March 2017);doi: 10.1117/12.2257776
Proc. SPIE 10147, Eliminate the vibration defect for laser interference lithography using an optical chopper system, 101471G(28 March 2017);doi: 10.1117/12.2257865
Proc. SPIE 10147, The pattern-matching based OPC approach for preemptively fixing the weak points, 101471H(24 March 2017);doi: 10.1117/12.2257898
Proc. SPIE 10147, Lithography and OPC friendly triple patterning decomposition method for VIA, 101471J(24 March 2017);doi: 10.1117/12.2257922
Proc. SPIE 10147, The ultra-violet partial coherence modulation transfer function for lithography, 101471L(29 March 2017);doi: 10.1117/12.2257941
Proc. SPIE 10147, Constructing freeform source through the combination of neural network and binary ant colony optimization, 101471M(28 March 2017);doi: 10.1117/12.2257944
Proc. SPIE 10147, Development of the next-generation ArF excimer laser with ultra-narrow stable spectral bandwidth for multiple patterning immersion lithography, 101471N(24 March 2017);doi: 10.1117/12.2257960
Proc. SPIE 10147, Excimer laser gas usage reduction technology for semiconductor manufacturing, 101471O(24 March 2017);doi: 10.1117/12.2257972
Proc. SPIE 10147, The thermal aberration analysis of a lithography projection lens, 101471P(24 March 2017);doi: 10.1117/12.2258037