30 March 2017 The impact of lower light source bandwidth on sub-10nm process node features
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Proceedings Volume 10147, Optical Microlithography XXX; 1014707 (2017); doi: 10.1117/12.2260210
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States
Abstract
Over the years, lithography engineers continue to focus on CD control, overlay and process capability to meet current node requirements for yield and device performance. Use of ArFi lithography for advanced process nodes demands challenging patterning budget improvements in the range of 1/10 nm especially for interconnect layers.(1) Previous experimental and simulation based investigations into the effects of light source bandwidth on imaging performance have provided the foundation for this work.(2-6) The goal from the light source manufacturer is to further enable capability and reduce variation through a number of parameters.(7-10)

In this study, the authors focus on the increase in image contrast that Source Mask Optimization (SMO) and Optical Proximity Correction (OPC) models deliver when comparing 300 fm and 200 fm light source E95% bandwidth. Using test constructs that follow current N7 / N5 ground rules and multiple pattern deconstruction rules, improvements in exposure latitude (EL), critical dimension (CD) and mask error enhancement factor (MEEF) performance are observed when SMO and OPC are optimized for 200 fm light source bandwidth when compared with the standard 300 fm bandwidth. New SMO-OPC flows will be proposed that users can follow to maximize process benefit. The predicted responses will be compared with the experimental on wafer responses of 7 nm features to lower light source bandwidth.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Will Conley, Paolo Alagna, Jason Shieh, Simon Hsieh, Tsann-Bim Chiou, Stephen Hsu, Greg Rechtsteiner, "The impact of lower light source bandwidth on sub-10nm process node features", Proc. SPIE 10147, Optical Microlithography XXX, 1014707 (30 March 2017); doi: 10.1117/12.2260210; http://dx.doi.org/10.1117/12.2260210
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KEYWORDS
Optical proximity correction

Light sources

Source mask optimization

Eye

Electroluminescence

Metrology

Critical dimension metrology

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