In this paper, we introduce a flow that applies advanced RET such as MBSRAF or specific local corrections to layouts with critical and yield limiting patterns. We also introduce in-process pattern match based on Cadence topological Squish pattern. Overall, this new flow of Pattern-Aware OPC (PA-OPC) achieves better margin for hotspots, without sacrificing turnaround time and is able to handle more complex patterns and environment than traditional methods. We demonstrate the benefit of the new flow with fine-grained process window control over different patterns.
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James Chen, Shin-Shing Yeh, Alan Zhu, Bayram Yenikaya, Fan-Hsuan Hsu, Yung-Ching Mai, Lawrence Lin, Nelson Lai, "Advanced application of pattern-aware OPC," Proc. SPIE 10147, Optical Microlithography XXX, 101471W (24 March 2017);