Exploiting regularity: breakthroughs in sub-7nm place-and-route

L. Liebmann; V. Gerousis; Paul Gutwin; Xuelian Zhu; Jan Petykiewicz

doi:10.1117/12.2259981

28 March 2017 Exploiting regularity: breakthroughs in sub-7nm place-and-route

L. Liebmann, V. Gerousis, Paul Gutwin, Xuelian Zhu, Jan Petykiewicz

Proceedings Volume 10148, Design-Process-Technology Co-optimization for Manufacturability XI; 101480F (2017) https://doi.org/10.1117/12.2259981
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

As pitch scaling is becoming constrained not only by lithographic resolution limits but alos by fundamental device and interconnect challenges the semiconductor industry has turned to cell-height reduction as a means of achieving competitive area scaling. The risk in using cell-height reduction to compensate for insufficient pitch scaling is that place- and-route inefficiencies caused by wiring congestion at the block level of the design can easily eliminate any area scaling gains made at the cell level of the design. This paper shows how careful cell-architecture optimization, physical design methodology changes, and place-and-route innovations have led to competitive block level area scaling for 7nm technology nodes and beyond. Data is presented to show that an entire node’s worth of scaling can be achieved through these comprehensive design-technology co-optimization efforts.

Conference Presentation

Citation Download Citation

L. Liebmann, V. Gerousis, Paul Gutwin, Xuelian Zhu, and Jan Petykiewicz "Exploiting regularity: breakthroughs in sub-7nm place-and-route", Proc. SPIE 10148, Design-Process-Technology Co-optimization for Manufacturability XI, 101480F (28 March 2017); https://doi.org/10.1117/12.2259981

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