Proceedings Volume 10149 is from: Logo
26 February - 2 March 2017
San Jose, California, United States
Front Matter: Volume 10149
Proc. SPIE 10149, Front Matter: Volume 10149, 1014901 (21 April 2017); doi: 10.1117/12.2279253
Patterning Techniques for Advanced Technology Nodes
Proc. SPIE 10149, Impact of materials engineering on edge placement error (Conference Presentation), 1014905 (27 April 2017); doi: 10.1117/12.2261107
Proc. SPIE 10149, Overcoming etch challenges related to EUV based patterning (Conference Presentation), 1014906 (27 April 2017); doi: 10.1117/12.2258153
Proc. SPIE 10149, Self-aligned block technology: a step toward further scaling, 1014908 (7 April 2017); doi: 10.1117/12.2258028
Advanced Plasma Process Control
Proc. SPIE 10149, Low-frequency roughness mitigation on N7/N5 fin patterning (Conference Presentation), 101490A (27 April 2017); doi: 10.1117/12.2263468
Proc. SPIE 10149, 3D CDSEM characterization of feature profiles at spacer on spacer SAQP process (Conference Presentation), 101490C (27 April 2017); doi: 10.1117/12.2261801
Patterning Challenges in Nanophotonic Structures
Proc. SPIE 10149, Silicon photonics and challenges for fabrication, 101490D (21 March 2017); doi: 10.1117/12.2263472
Proc. SPIE 10149, Reducing Line Edge Roughness in Si and SiN through plasma etch chemistry optimization for photonic waveguide applications, 101490F (21 March 2017); doi: 10.1117/12.2258112
Patterning Materials and Etch: Joint Session with Conferences 10146 and 10149
Proc. SPIE 10149, Plasma-assisted thermal atomic layer etching of Al2O3, 101490H (21 March 2017); doi: 10.1117/12.2258129
Proc. SPIE 10149, Self-aligned quadruple patterning using spacer on spacer integration optimization for N5, 101490I (4 April 2017); doi: 10.1117/12.2258173
Proc. SPIE 10149, Directed self-assembly patterning strategies for phase change memory applications, 101490J (21 March 2017); doi: 10.1117/12.2257829
Novel Plasma Patterning Techniques
Proc. SPIE 10149, Nanoimprint, DSA, and multi-beam lithography: patterning technologies with new integration challenges, 101490K (10 April 2017); doi: 10.1117/12.2259966
Proc. SPIE 10149, Overview of several applications of chemical downstream etching (CDE) for IC manufacturing: advantages and drawbacks versus WET processes, 101490L (21 March 2017); doi: 10.1117/12.2257971
Proc. SPIE 10149, Study of selective chemical downstream plasma etching of silicon nitride and silicon oxide for advanced patterning applications, 101490M (21 March 2017); doi: 10.1117/12.2257927
Litho Etch Process Interaction: Joint Session with Conferences 10147 and 10149
Proc. SPIE 10149, Co-optimization of lithographic and patterning processes for improved EPE performance, 101490N (21 March 2017); doi: 10.1117/12.2257979
Proc. SPIE 10149, Self-aligned blocking integration demonstration for critical sub-40nm pitch Mx level patterning, 101490O (7 April 2017); doi: 10.1117/12.2257769
Patterning Solutions for Emerging Products
Proc. SPIE 10149, Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation), 101490P (27 April 2017); doi: 10.1117/12.2257507
Proc. SPIE 10149, Guiding gate-etch process development using 3D surface reaction modeling for 7nm and beyond, 101490Q (21 March 2017); doi: 10.1117/12.2271389
Proc. SPIE 10149, Plasma processing of III-V materials for energy efficient electronics applications, 101490R (21 March 2017); doi: 10.1117/12.2257863
Proc. SPIE 10149, Design and fabrication of resonator-QWIP for SF6 gas sensor application, 101490S (21 March 2017); doi: 10.1117/12.2257990
Poster Session
Proc. SPIE 10149, Spin-on metal oxide materials for N7 and beyond patterning applications, 101490T (7 April 2017); doi: 10.1117/12.2264323
Proc. SPIE 10149, Improvement of a block co-polymer (PS-b-PDMS) template etch profile using amorphous carbon layer, 101490U (21 March 2017); doi: 10.1117/12.2258147
Proc. SPIE 10149, Roughness and uniformity improvements on self-aligned quadruple patterning technique for 10nm node and beyond by wafer stress engineering, 101490W (9 May 2017); doi: 10.1117/12.2258097
Proc. SPIE 10149, A method to accelerate creation of plasma etch recipes using physics and Bayesian statistics, 101490X (21 March 2017); doi: 10.1117/12.2263507
Proc. SPIE 10149, The line roughness improvement with plasma coating and cure treatment for 193nm lithography and beyond, 101490Y (21 March 2017); doi: 10.1117/12.2257395
Proc. SPIE 10149, The application of advanced pulsed plasma in Fin etch loading improvement, 101490Z (21 March 2017); doi: 10.1117/12.2266539
Proc. SPIE 10149, Facile fabrication of Si-based nanostructures, 1014910 (21 March 2017); doi: 10.1117/12.2271503
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