7 April 2017 Self-aligned block technology: a step toward further scaling
Author Affiliations +
Abstract
In this work, we present and compare two integration approaches to enable self-alignment of the block suitable for the 5- nm technology node. The first approach is exploring the insertion of a spin-on metal-based material to memorize the first block and act as an etch stop layer in the overall integration. The second approach is evaluating the self-aligned block technology employing widely used organic materials and well-known processes. The concept and the motivation are discussed considering the effects on design and mask count as well as the impact on process complexity and EPE budget. We show the integration schemes and discuss the requirements to enable self-alignment. We present the details of materials and processes selection to allow optimal selective etches and we demonstrate the proof of concept using a 16- nm half-pitch BEOL vehicle. Finally, a study on technology insertion and cost estimation is presented.
Conference Presentation
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Frédéric Lazzarino, Frédéric Lazzarino, Nihar Mohanty, Nihar Mohanty, Yannick Feurprier, Yannick Feurprier, Lior Huli, Lior Huli, Vinh Luong, Vinh Luong, Marc Demand, Marc Demand, Stefan Decoster, Stefan Decoster, Victor Vega Gonzalez, Victor Vega Gonzalez, Julien Ryckaert, Julien Ryckaert, Ryan Ryoung Han Kim, Ryan Ryoung Han Kim, Arindam Mallik, Arindam Mallik, Philippe Leray, Philippe Leray, Chris Wilson, Chris Wilson, Jürgen Boemmels, Jürgen Boemmels, Kaushik Kumar, Kaushik Kumar, Kathleen Nafus, Kathleen Nafus, Anton deVilliers, Anton deVilliers, Jeffrey Smith, Jeffrey Smith, Carlos Fonseca, Carlos Fonseca, Julie Bannister, Julie Bannister, Steven Scheer, Steven Scheer, Zsolt Tokei, Zsolt Tokei, Daniele Piumi, Daniele Piumi, Kathy Barla, Kathy Barla, } "Self-aligned block technology: a step toward further scaling", Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 1014908 (7 April 2017); doi: 10.1117/12.2258028; https://doi.org/10.1117/12.2258028
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