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The quality of the image transfer process depends on the characteristics of the sidewall pattern morphology. Rectangular Sidewalls with a flat top and vertical edges will result with symmetrical and uniform etched image. On the other hand, Facet top, bent sidewalls, sloped edges or foot, may distort the etched image and device electrical characteristics. In this paper we present a description of the 3DSEM metrology technique used and simulation results. We demonstrate three dimensional characterization of Sidewalls pattern fabricated with different etch recipes:
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