While demonstrating attractive aspects, SAQP spacer on spacer flow brings challenges of its own. Namely, material set selections and etch chemistry development for adequate selectivities, mandrel shape and spacer shape engineering to improve edge placement error (EPE). In this paper we follow up and extend upon our previous learning and proceed into more details on the robustness of the integration in regards to final pattern transfer and full wafer critical dimension uniformity. Furthermore, since the number of intermediate steps is reduced, one will expect improved uniformity and pitch walking control. This assertion will be verified through a thorough pitch walking analysis.
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Sophie Thibaut, Angélique Raley, Nihar Mohanty, Subhadeep Kal, Eric Liu, Akiteru Ko, David O'Meara, Kandabara Tapily, Peter Biolsi, "Self-aligned quadruple patterning using spacer on spacer integration optimization for N5," Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490I (4 April 2017);