21 March 2017 Directed self-assembly patterning strategies for phase change memory applications
Author Affiliations +
Phase change material (PCM)-based memory cells have shown promise as an enabler for low power, high density memory. There is a current need to develop and improve patterning strategies to attain smaller device dimensions. In this work, two methods of patterning of PCM device structures was achieved using directed self-assembly (DSA) patterning: the formation of a high aspect ratio pore designed for atomic layer deposition (ALD) of etch damage-free PCM, and pillar formation by image reversal and plasma etch transfer into a PCM film. We show significant CD reduction (180 nm to 20 nm) of a lithographically defined hole by plasma etch shrink, DSA spin-coat and subsequent high selectivity pattern transfer. We then demonstrate structural fabrication of both DSA-defined SiN pores with ALD PCM and DSA-defined PCM pillars. Challenges to both pore and pillar fabrication are discussed.
Conference Presentation
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Robert L. Bruce, Robert L. Bruce, Gloria Fraczak, Gloria Fraczak, John M. Papalia, John M. Papalia, HsinYu Tsai, HsinYu Tsai, Matt BrightSky, Matt BrightSky, Hiroyuki Miyazoe, Hiroyuki Miyazoe, Yu Zhu, Yu Zhu, Sebastian U. Engelmann, Sebastian U. Engelmann, Hsiang-Lan Lung, Hsiang-Lan Lung, Takeshi Masuda, Takeshi Masuda, Koukou Suu, Koukou Suu, Chi-Chun Liu, Chi-Chun Liu, Hao Tang, Hao Tang, John C. Arnold, John C. Arnold, Nelson Felix, Nelson Felix, Chung H. Lam, Chung H. Lam, } "Directed self-assembly patterning strategies for phase change memory applications", Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490J (21 March 2017); doi: 10.1117/12.2257829; https://doi.org/10.1117/12.2257829

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