21 March 2017 Directed self-assembly patterning strategies for phase change memory applications
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Abstract
Phase change material (PCM)-based memory cells have shown promise as an enabler for low power, high density memory. There is a current need to develop and improve patterning strategies to attain smaller device dimensions. In this work, two methods of patterning of PCM device structures was achieved using directed self-assembly (DSA) patterning: the formation of a high aspect ratio pore designed for atomic layer deposition (ALD) of etch damage-free PCM, and pillar formation by image reversal and plasma etch transfer into a PCM film. We show significant CD reduction (180 nm to 20 nm) of a lithographically defined hole by plasma etch shrink, DSA spin-coat and subsequent high selectivity pattern transfer. We then demonstrate structural fabrication of both DSA-defined SiN pores with ALD PCM and DSA-defined PCM pillars. Challenges to both pore and pillar fabrication are discussed.
Conference Presentation
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Robert L. Bruce, Gloria Fraczak, John M. Papalia, HsinYu Tsai, Matt BrightSky, Hiroyuki Miyazoe, Yu Zhu, Sebastian U. Engelmann, Hsiang-Lan Lung, Takeshi Masuda, Koukou Suu, Chi-Chun Liu, Hao Tang, John C. Arnold, Nelson Felix, Chung H. Lam, "Directed self-assembly patterning strategies for phase change memory applications", Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490J (21 March 2017); doi: 10.1117/12.2257829; https://doi.org/10.1117/12.2257829
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