21 March 2017 Overview of several applications of chemical downstream etching (CDE) for IC manufacturing: advantages and drawbacks versus WET processes
Author Affiliations +
Abstract
Today the IC manufacturing faces lots of problematics linked to the continuous down scaling of printed structures. Some of those issues are related to wet processing, which are often used in the IC manufacturing flow for wafer cleaning, material etching and surface preparation. In the current work we summarize the limitations for the next nodes of wet processing such as metallic contaminations, wafer charging, corrosion and pattern collapse. As a replacement, we promoted the isotropic chemical dry etching (CDE) which is supposed to fix all the above drawbacks. Etching steps of SI3N4 layers were evaluated in order to prove the interest of such technique.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Côme de Buttet, Côme de Buttet, Emilie Prevost, Emilie Prevost, Alain Campo, Alain Campo, Philippe Garnier, Philippe Garnier, Stephane Zoll, Stephane Zoll, Laurent Vallier, Laurent Vallier, Gilles Cunge, Gilles Cunge, Patrick Maury, Patrick Maury, Thomas Massin, Thomas Massin, Sonarith Chhun, Sonarith Chhun, "Overview of several applications of chemical downstream etching (CDE) for IC manufacturing: advantages and drawbacks versus WET processes", Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490L (21 March 2017); doi: 10.1117/12.2257971; https://doi.org/10.1117/12.2257971
PROCEEDINGS
13 PAGES


SHARE
RELATED CONTENT


Back to Top