19 October 2016 Transfer printing of thin-film microscale GaAs lasers on silicon
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Proceedings Volume 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration; 1015201 (2016) https://doi.org/10.1117/12.2243454
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
We exploit microscale, thin-film gallium arsenide (GaAs) lasers integrated onto silicon (Si) substrates via transfer printing, with a thermally conductive interface material for continuous wave (CW) operation at room temperature. Concepts that bypass existing challenges for III-V/Si integration are presented, and we demonstrate them in strategies for releasing and transfer printing fully formed, functional thin-film microscale GaAs based lasers onto Si substrates where a metallic thin film serves as an adhesive and a thermally conductive interface. Numerical simulations reveal the key considerations in thermal management, with an emphasis on the role of this interface layer. Electrically pumped devices printed on Si exhibit continuous-wave (CW) lasing in the near-infrared range (around 820 nm) at room temperature, with performance comparable to unreleased devices on their native substrates. The spectral shift is consistent with thermal modeling. In addition, preliminary experiments show that the laser devices are possible to be integrated with Si waveguide arrays as well as flexible substrates. The results presented here have promise as generalized routes for advanced heterogeneous integration in next-generation electronic and photonic circuits.
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Xing Sheng, Xing Sheng, } "Transfer printing of thin-film microscale GaAs lasers on silicon", Proc. SPIE 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration, 1015201 (19 October 2016); doi: 10.1117/12.2243454; https://doi.org/10.1117/12.2243454
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