19 October 2016 Experimental study of HgCdTe imaging sensor irradiated by pulse CO2 laser
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Proceedings Volume 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration; 1015202 (2016) https://doi.org/10.1117/12.2243576
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
The damages of TEA-CO2 laser to HgCdTe imaging sensor are researched experimentally and theoretically. The shadows, cracks and dark line are observed. There is a gap between photosensitive layer and CdZnTe which decreases light transmittance, so that the shadows occur. It shows that the crack damages begin from photosensitive layer. The sensor is irradiated by pulse laser, the absorptivity of photosensitive layer is strong, sharp temperatures fluctuations inside the sensor, leading to stress. With the stress increased, the cracks are observed on the surface of the detector. Cracked the surface of the substrate, and effective transmission reduced, which caused gray pixel response decline. The dark line in image occurs several times because Hg atoms separate out from the detector and gather together at the Si-COMS which makes a short circuit between silicon substrate and signal choice line. The volatility of Hg makes the short circuit is unstable, resulting in the dark line repeated in the output image, but the short circuit occurs by chance.
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Xi Wang, Xi Wang, Qingsheng Wang, Qingsheng Wang, Hongtao Hu, Hongtao Hu, Xiaodong Fang, Xiaodong Fang, Jinsong Nie, Jinsong Nie, } "Experimental study of HgCdTe imaging sensor irradiated by pulse CO2 laser", Proc. SPIE 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration, 1015202 (19 October 2016); doi: 10.1117/12.2243576; https://doi.org/10.1117/12.2243576
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