19 October 2016 Study of plasma oscillations in photoelectric semiconductor detectors
Author Affiliations +
Proceedings Volume 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration; 1015219 (2016) https://doi.org/10.1117/12.2247409
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
In this paper, the phenomena of plasma oscillations in silicon-based p-n junction photoelectric detector are researched. Starting from the classic Drift-Diffusion Model, the basic equations of photodetector with reverse bias under the radiation of femtosecond optical pulse were deduced. In our physical model, the carrier mobility in low electric field was introduced, and basic parameters including diffusion coefficients and damping coefficients were modified according to the nonlinear relation between carrier drift velocity and high electric field. A numerical algorithm base d on the finite difference method is proposed to solve the model. By solving the equations numerically, we obtained the transient dynamic behaviors of this kind of photoelectric detector, the current responses of the plasma oscillations phenomena, and the frequency of plasma oscillations, etc. By comparing the numerical solutions of plasma oscillations with approximate analytical solutions, we explored the reason for the difference between them.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bing-feng Luo, Bing-feng Luo, Long-zhao Lu, Long-zhao Lu, Xiang-ai Cheng, Xiang-ai Cheng, Xiang-yang Yu, Xiang-yang Yu, } "Study of plasma oscillations in photoelectric semiconductor detectors ", Proc. SPIE 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration, 1015219 (19 October 2016); doi: 10.1117/12.2247409; https://doi.org/10.1117/12.2247409
PROCEEDINGS
7 PAGES


SHARE
Back to Top