19 October 2016 Study on the preparation of resist mask based on two-consecutive electron beam exposure
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Proceedings Volume 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation; 101540D (2016) https://doi.org/10.1117/12.2244943
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
To overcome the alignment error caused by the overlay when the conventional electron beam lithography produces the four-step relief structure, the paper did a detailed research on the influence of different accelerating voltage on the exposure depth during the process of exposure. Therefore, it drew out the limit value of exposure depth under different accelerating voltage and the relationship between the electron beam energy and critical exposed dose. Through the analysis of the experimental results, it worked out the optimum process parameter combination of exposure. The accelerating voltage of the first exposure was 5keV and the exposed dose was 100μC/cm2, while the second accelerating voltage was 15keV and the exposed dose was 150μC/cm2. Finally, the four-step relief structure was made on the resist layer and this structure met the needs of the graphic transfer process on the etch mask.
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Yanbing Leng, Li Wang, Yanjun Sun, Lianhe Dong, "Study on the preparation of resist mask based on two-consecutive electron beam exposure ", Proc. SPIE 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation, 101540D (19 October 2016); doi: 10.1117/12.2244943; https://doi.org/10.1117/12.2244943
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