19 October 2016 Matching characteristics of different buffer layers with VO2 thin films
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Proceedings Volume 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation; 101540K (2016) https://doi.org/10.1117/12.2246023
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.
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Kai Yang, Dongping Zhang, Yi Liu, Tianrui Guan, Xiaonan Qin, Aihua Zhong, Xingmin Cai, Ping Fan, Weizhong Lv, "Matching characteristics of different buffer layers with VO2 thin films", Proc. SPIE 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation, 101540K (19 October 2016); doi: 10.1117/12.2246023; https://doi.org/10.1117/12.2246023
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