19 October 2016 Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors
Author Affiliations +
Proceedings Volume 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation; 101540N (2016) https://doi.org/10.1117/12.2246472
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Wang, Jun Wang, Jin Guo, Jin Guo, Feng Xie, Feng Xie, Guosheng Wang, Guosheng Wang, Haoran Wu, Haoran Wu, Man Song, Man Song, Yuanyuan Yi, Yuanyuan Yi, } "Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors", Proc. SPIE 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation, 101540N (19 October 2016); doi: 10.1117/12.2246472; https://doi.org/10.1117/12.2246472
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Effect of p GaN layer doping on the photoresponse of...
Proceedings of SPIE (August 09 2015)
The fabrication of a 128×128 solar blind AlGaN p i...
Proceedings of SPIE (August 05 2009)
III-nitride avalanche photodiodes
Proceedings of SPIE (January 25 2009)
GaN-based nanowire photodetectors
Proceedings of SPIE (January 20 2012)
Effects of Mg doping on the photoconductivity of GaN films...
Proceedings of SPIE (September 16 2002)

Back to Top