19 October 2016 Measurement of excited layer thickness in highly photo-excited GaAs
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Proceedings Volume 10155, Optical Measurement Technology and Instrumentation; 101551Q (2016) https://doi.org/10.1117/12.2246652
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
Highly photo-excited layer thickness in GaAs is measured using a pump probe arrangement. A normally incident pump illumination spatially modulated by a mask will induce a corresponding refractive index change distribution in the depth direction due to edge scattering and attenuation absorption effect, which can deflect the probe beam passing through this excited region. Maximum deflection of the probe beam will be limited by the thickness of excited layer, and thus can also be employed to measure the thickness of the photo-excited layer of the material. Theoretical calculation confirms the experimental results. This method can find its application in measurements of photo-excited layer thickness of many kinds of materials and be significant to study the characteristics of materials in laser machining, grating and waveguide fabricating.
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Lingliang Liang, Jinshou Tian, Tao Wang, Shengli Wu, Fuli Li, Guilong Gao, "Measurement of excited layer thickness in highly photo-excited GaAs", Proc. SPIE 10155, Optical Measurement Technology and Instrumentation, 101551Q (19 October 2016); doi: 10.1117/12.2246652; https://doi.org/10.1117/12.2246652
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