In this article, BS is prepared using non-mask reactive ion etching technique and PIN BS detectors are fabricated. It is indicated that there is a disordered layer that is 2.0μm -3.5μm thick and made up of pillars with 90nm-400nm in diameter and 200nm-600nm in spacing interval. The reflectance of BS is less than 7% in the wavelength from 400nm to 1100nm, and rises from 1040nm. The absorptance of BS sample prepared by non-mask reactive ion etching remains more than 93% from 400nm to 1040nm, and the absorptance of 60% is observed at the wavelengths longer than 1500nm. High temperature annealing does not deteriorate its light absorption performance. The front-illuminated and back-illuminated BS PIN detectors are structured. At the wavelength of 1064nm, the responsivities of front-illuminated and back-illuminated BS PIN detectors are improved from 0.30A/W to 0.43A/W and 0.58A/W respectively.
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Naiman Liao, Linlai Kou, Chunlin Luo, Renhao Li, "Infrared responsivity enhancement for silicon detectors by non-mask reactive ion etching," Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 1015708 (25 October 2016);