25 October 2016 Surface passivation of backside-illuminated InSb FPAs
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Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 1015716 (2016) https://doi.org/10.1117/12.2245810
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
A method of passivation of etch-thinned bulk InSb by anodic oxide grown by wet anodization and vacuum deposition of SiNx layers have been investigated Thinned bulk n-type InSb with (111) orientation forms distinctively two types of interfaces on the indium and antimony faces, respectively. The junctions are diffused on the indium face. The paper presents the process and characterization for surface passivation of the backside illuminated Sb face that absorbs the photons. The surface passivation and the interfaces are characterized with Metal-Insulator-Semiconductor (MIS) devices. The effect of anodic oxide/SiNx passivation was compared to SiNx passivation. The electrical features observed in the C-V curves of MIS structures indicate that anodic oxide grown by wet anodization has the better effect on reducing the surface states and surface recombination velocity. The low-frequency-like response in the inversion region of the C-V curves was explained in view of the oxidation states of In and Sb. Finally, by growing the 30nm anodic oxide and depositing 400nm SiNx on diode structure of InSb, the performance of FPA in this case was compared with the SiNx only method. The results showed the performance of device is better than for the SiNx only method.
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Peng Wei, Peng Wei, Kelin Zheng, Kelin Zheng, Liwen Wang, Liwen Wang, Dongfeng Geng, Dongfeng Geng, Xianjun Su, Xianjun Su, } "Surface passivation of backside-illuminated InSb FPAs", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 1015716 (25 October 2016); doi: 10.1117/12.2245810; https://doi.org/10.1117/12.2245810

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