Comparative study of deep traps in extended wavelength InxGa1-xAs photodetectors

Tie Zhang; Ying Zhou; Congrui Xue; Hengjing Tang; Xue Li; Haimei Gong; Xiaoli Ji

doi:10.1117/12.2246625

25 October 2016 Comparative study of deep traps in extended wavelength In_xGa_1-xAs photodetectors

Tie Zhang, Ying Zhou, Congrui Xue, Hengjing Tang, Xue Li, Haimei Gong, Xiaoli Ji

Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 101571P (2016) https://doi.org/10.1117/12.2246625
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China

Abstract

In this paper, deep-level transient spectroscopy (DLTS) techniques are used to study the defects presented in In_xGa_1-xAs/InP PIN photodetectors. For the lattice matched In_xGa_1-xAs /InP devices with x=0.53, the only electron trap located near the middle of the band gap is observed. A study of the influence of the bias voltage variation on DLTS signal for electron trap illustrates that this trap are uniformly distributed in the volume of In_xGa_1-xAs material. On the other hand, for the lattice mismatch In_xGa_1-xAs /InP devices, the additional hole defect located in the lower side of the middle gap is observed and this concentration increased with the depletion width. It is considered that these traps are related to the lattice mismatch and could be contributed to the large dark currents in the extended wavelength In_xGa_1-xAs photodetectors.

Citation Download Citation

Tie Zhang, Ying Zhou, Congrui Xue, Hengjing Tang, Xue Li, Haimei Gong, and Xiaoli Ji "Comparative study of deep traps in extended wavelength In_xGa_1-xAs photodetectors", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101571P (25 October 2016); https://doi.org/10.1117/12.2246625

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