25 October 2016 Comparative study of deep traps in extended wavelength InxGa1-xAs photodetectors
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Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 101571P (2016) https://doi.org/10.1117/12.2246625
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
In this paper, deep-level transient spectroscopy (DLTS) techniques are used to study the defects presented in InxGa1-xAs/InP PIN photodetectors. For the lattice matched InxGa1-xAs /InP devices with x=0.53, the only electron trap located near the middle of the band gap is observed. A study of the influence of the bias voltage variation on DLTS signal for electron trap illustrates that this trap are uniformly distributed in the volume of InxGa1-xAs material. On the other hand, for the lattice mismatch InxGa1-xAs /InP devices, the additional hole defect located in the lower side of the middle gap is observed and this concentration increased with the depletion width. It is considered that these traps are related to the lattice mismatch and could be contributed to the large dark currents in the extended wavelength InxGa1-xAs photodetectors.
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Tie Zhang, Tie Zhang, Ying Zhou, Ying Zhou, Congrui Xue, Congrui Xue, Hengjing Tang, Hengjing Tang, Xue Li, Xue Li, Haimei Gong, Haimei Gong, Xiaoli Ji, Xiaoli Ji, } "Comparative study of deep traps in extended wavelength InxGa1-xAs photodetectors", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101571P (25 October 2016); doi: 10.1117/12.2246625; https://doi.org/10.1117/12.2246625
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