1 November 2016 High operating temperature InAlSb infrared detectors
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Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 101573B (2016) https://doi.org/10.1117/12.2247359
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
The recent progresses of our research in InxAl1-xSb infrared detector based on molecular beam epitaxy are presented. Al composition with 0-0.3 is used for adjusting energy gaps of InSb and a p-i-n structure is utilized to decrease dark current. InxAl1-xSb ternary alloys are grown by molecular beam epitaxy on InSb substrates, and the material quality is characterized using high resolution x-ray diffraction. In order to exploit this epitaxial material we have developed new mesa and passivation technology based on matured InSb fabrication process. The InAlSb diodes has a cut-off wavelength of around 4.8μm. The reverse bias dark current of InAlSb diodes have been measured. The dark current of the pin InAlSb diode is seen to smaller that of the bulk p+n InSb diodes by 4-5 times in 77K.
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Mo Li, Mo Li, Gang Chen, Gang Chen, Hao Li, Hao Li, Zhaofan Zhang, Zhaofan Zhang, Pan Peng, Pan Peng, Yanqiu Lv, Yanqiu Lv, } "High operating temperature InAlSb infrared detectors", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573B (1 November 2016); doi: 10.1117/12.2247359; https://doi.org/10.1117/12.2247359

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