1 November 2016 Numerical simulation study on quantum efficiency characteristics of InP/InGaAs/InP infrared photocathode
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Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 101573C (2016) https://doi.org/10.1117/12.2247394
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
The quantum efficiency characteristics of InP/In0.53Ga0.47As/InP photocathode which is one of the field-assisted negative electron affinity photocathodes with III-V compound semiconductor and works at transmission mode with a wide1 spectral response range from 1.0-1.7 μm were studied in this paper. Under certain field-assisted bias voltage, internal quantum efficiency at different wavelength versus structure parameters and doping concentration of the photocathode was simulated by the APSYS program. Results show that: First, internal quantum efficiency of the photocathode rises with the increasing of the field-assisted bias voltage. Second, the internal quantum efficiency gradually increases to a maximum at thickness=0.2um of P-InGaAs photo-absorbing layer and then reduces with the increasing of thickness. However, doping concentration of P-InGaAs photo-absorbing layer has little influence on it. Third, the internal quantum efficiency reduces with the increasing of thickness and doping concentration of P-InP photoelectron-emitting layer. The optimization results show that when the thickness of the photo-absorbing layer and the photoelectron-emitting layer are both 0.2 μm, and the doping concentration of the photo-absorbing layer and the photoelectron-emitting layer are about 1.5×1015 cm-3 and 1.0×1016 cm-3 respectively, under a certain field-assisted bias voltage, the line of the external quantum efficiency versus wavelength is ideal. Besides, the response time of photocathode can be reduced to less than 50 ps.
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Junkai Xu, Junkai Xu, Xiangyan Xu, Xiangyan Xu, Jinshou Tian, Jinshou Tian, Duan Luo, Duan Luo, Dandan Hui, Dandan Hui, } "Numerical simulation study on quantum efficiency characteristics of InP/InGaAs/InP infrared photocathode", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573C (1 November 2016); doi: 10.1117/12.2247394; https://doi.org/10.1117/12.2247394
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