1 November 2016 Growth and characterization of high strain InGaAs/GaAs quantum well by molecular beam epitaxy
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Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 101573F (2016) https://doi.org/10.1117/12.2247398
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
High indium composition InxGa1-xAs/GaAs quantum wells (x˃0.4) in which the well width reached to 7 nm without relaxing were grown on (100) GaAs substrates by MBE. The good crystal quality and optical properties of the high strained InGaAs/GaAs QW were obtained by controlling quasi-2D growth model and optimizing the growth condition including the growth temperature, growth rate, and V/III BEP ratio. Photoluminescence (PL) showed that the cutoff wavelength was about 1.3μm at room temperature with narrow full width at half maximum below 30meV. Dilute nitrogen and high In composition InGaAsN/GaAs QW extended wavelength infrared photodetectors at 1.3 and 1.55 μm were also realized.
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Rui Shan, Yu Liu, Jie Guo, Guowei Wang, Yingqiang Xu, "Growth and characterization of high strain InGaAs/GaAs quantum well by molecular beam epitaxy", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573F (1 November 2016); doi: 10.1117/12.2247398; https://doi.org/10.1117/12.2247398
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