1 November 2016 Studies on different passivation on InAs/GaSb type-II superlattice photodetectors
Author Affiliations +
Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 101573K (2016) https://doi.org/10.1117/12.2247485
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
As a promising candidate for the next generation of infrared detection and imaging, more and more studies are focused on the type-II InAs/GaSb superlattice recently. In this paper, we studied different passivation techniques and the dielectric film-semiconductor interface properties for InAs/GaSb superlattice photodetectors. We found that with Si3N4 passivation, the R0A of the superlattice detector decreased from 2.8×105Ωcm2 to 12Ωcm2 at 80K after a process of rapid thermal annealing (RTA) at 250°C for 60s. Excessive surface charge of 6.15×1012cm-2 was measured from a gate-controlled structure. Meanwhile, the SiO2 passivated devices can sustain its electrical performance after the RTA process.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yurong Cui, Yurong Cui, Jianxin Chen, Jianxin Chen, Zhicheng Xu, Zhicheng Xu, Jiajia Xu, Jiajia Xu, Yi Zhou, Yi Zhou, Li He, Li He, } "Studies on different passivation on InAs/GaSb type-II superlattice photodetectors", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573K (1 November 2016); doi: 10.1117/12.2247485; https://doi.org/10.1117/12.2247485
PROCEEDINGS
5 PAGES


SHARE
Back to Top