6 March 1989 On Plasma-Film Interactions In rf Sputtered a-Si:H and a-Ge:H
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Proceedings Volume 1016, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VII; (1989) https://doi.org/10.1117/12.949920
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
The extension of a previous investigation of plasma-film interactions in a-Si:H rf sputtered in He/H2, Ar/H2, and Xe/H2, at a target-to-substrate gap d = 1", to include higher gaps and rf sputtered a-Ge:H, is described and discussed. As expected, the interactions are weakened at d≥2", and the resulting films appear to be more relaxed than at d = 1". The analysis of the IR stretch and bending mode bands in annealed films sheds new light on relaxation processes and the relation between the stretch mode structure and the optoelectronic quality of a-Si:H films. In a-Ge:H, the deposition rate increases with increasing rf power in a manner similar to that in a-Si:H, and decreases exponentially with increasing d. The dihydride and trihydride bonding configuration densities decrease and the photoconductivity increases with increasing rf power (as in a-Si:H) and increasing d. These phenomena are discussed in relation to the dependence of the plasma-film interactions on these parameters.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Shinar, J. Shinar, S. Mitra, S. Mitra, H.-S. Wu, H.-S. Wu, } "On Plasma-Film Interactions In rf Sputtered a-Si:H and a-Ge:H", Proc. SPIE 1016, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VII, (6 March 1989); doi: 10.1117/12.949920; https://doi.org/10.1117/12.949920
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