17 April 2017 Photo-electronic current transport in back-gated graphene transistor
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Abstract
In this work, we have studied photo-electronic current transport in a back-gated graphene field-effect transistor. Under the light illumination, band bending at the metal/graphene interface develops a built-in potential which generates photonic current at varying back-gate biases. A typical MOSFET type back-gated transistor structure uses a monolayer graphene as the channel layer formed over the silicon dioxide/silicon substrate. It is shown that the photo-electronic current consists of current contributions from photovoltaic, photo-thermoelectric and photo-bolometric effects. A maximum external responsivity close to 0.0009A/W is achieved at 30μW laser power source and 633nm wavelength.
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Ashok Srivastava, Ashok Srivastava, Xinlu Chen, Xinlu Chen, Aswini K. Pradhan, Aswini K. Pradhan, } "Photo-electronic current transport in back-gated graphene transistor", Proc. SPIE 10167, Nanosensors, Biosensors, Info-Tech Sensors and 3D Systems 2017, 101671H (17 April 2017); doi: 10.1117/12.2258051; https://doi.org/10.1117/12.2258051
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