Dynamic Band Filling In GaAs/AlAs Multiple Quantum Wells For Efficient Reflection Modulation

Wolfgang Kowalsky; Thomas Hackbarth; Karl J. Ebeling

doi:10.1117/12.949957

8 March 1989 Dynamic Band Filling In GaAs/AlAs Multiple Quantum Wells For Efficient Reflection Modulation

Wolfgang Kowalsky, Thomas Hackbarth, Karl J. Ebeling

Proceedings Volume 1017, Nonlinear Optical Materials; (1989) https://doi.org/10.1117/12.949957
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

We demonstrate all-optical intensity modulation in GaAs/AlAs multiple quantum well (MQW) devices with integrated dielectric reflector grown by molecular beam epitaxy. A 4 mW control beam at λ_c = 790 nm wavelength produces a reflection change of 1:3 by dynamic band filling in a twenty-period GaAs MQW structure of well width d_OW = 20 nm for a test beam at λ_t = 866 nm which is close to the lowest energy transition ifl the quantum wells ( λ= 868 nm). The integration of a multilayered dielectric reflector of 92% reflectivity consisting of 20 pairs of A1_0.08Ga_0.92As/AlAs quarterwave layers allows for operation in reflection and thus removal of tWe opaque GaAs substrate is not required. Dynamics are shown to be limited by excess carrier lifetimes of τ = 4 ns corresponding to a 3 dB frequency of 70 MHz. Surface recombination in microresonator structures may be used to improve the dynamics. For a theoretical analysis the carrier-induced absorption change by dynamic band filling of the quantized energy states in the conduction and valence bands of the quantum wells is considered.

Citation Download Citation

Wolfgang Kowalsky, Thomas Hackbarth, and Karl J. Ebeling "Dynamic Band Filling In GaAs/AlAs Multiple Quantum Wells For Efficient Reflection Modulation", Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); https://doi.org/10.1117/12.949957

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