5 April 2017 High frequency guided wave propagation in monocrystalline silicon wafers
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Abstract
Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.
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Marco Pizzolato, Marco Pizzolato, Bernard Masserey, Bernard Masserey, Jean-Luc Robyr, Jean-Luc Robyr, Paul Fromme, Paul Fromme, } "High frequency guided wave propagation in monocrystalline silicon wafers", Proc. SPIE 10170, Health Monitoring of Structural and Biological Systems 2017, 101702B (5 April 2017); doi: 10.1117/12.2260035; https://doi.org/10.1117/12.2260035
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