12 May 2017 Experimental verification of thermal damage mechanism in single junction GaAs solar cells irradiated by laser
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Proceedings Volume 10173, Fourth International Symposium on Laser Interaction with Matter; 1017305 (2017) https://doi.org/10.1117/12.2268339
Event: 4th International Symposium on Laser Interaction with Matter, 2016, Chengdu, China
Abstract
Three types of laser irradiating experiments on single junction GaAs solar cells with the same laser energy coupling intensity were carried out, which were irradiated by in-band (808 nm) and out-of-band (1.07 μm) continuous wave lasers respectively and simultaneously. On the basis of the changes of current-voltage characteristic curves of irradiated solar cells, the damage degrees could be divided into three stages which were gently, seriously and thoroughly damaged stages. The damage mechanism was studied from two aspects: output changes of solar cell equivalent circuit under different configuration settings, thermal analysis model. The results show that damage degrees of gently and thoroughly damaged stages is insensitive to irradiation intensity. However, the damage degree of seriously damaged stage is sensitive to irradiation intensity and this is regarded to be related to thermal decomposition of GaAs. Moreover, the increase of PN junction defects leads to performance degradation of irradiated solar cells. In conclusion, the thermal damage leads to the increase of PN junction defects, thus results in the performance degradation of cells.
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Yunpeng Li, Guobin Feng, Jianmin Zhang, Xinwei Lin, Yubin Shi, Pengcheng Dou, "Experimental verification of thermal damage mechanism in single junction GaAs solar cells irradiated by laser", Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 1017305 (12 May 2017); doi: 10.1117/12.2268339; https://doi.org/10.1117/12.2268339
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