12 May 2017 Real-time detection of laser-GaAs interaction process
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Proceedings Volume 10173, Fourth International Symposium on Laser Interaction with Matter; 1017307 (2017) https://doi.org/10.1117/12.2268115
Event: 4th International Symposium on Laser Interaction with Matter, 2016, Chengdu, China
Abstract
A real-time method based on laser scattering technology was used to detect the interaction process of GaAs with a 1080 nm laser. The detector collected the scattered laser beam from the GaAs wafer. The main scattering sources were back surface at first, later turn into front surface and vapor, so scattering signal contained much information of the interaction process. The surface morphologies of GaAs with different irradiation times were observed using an optical microscope to confirm occurrence of various phenomena. The proposed method is shown to be effective for the real-time detection of GaAs. By choosing a proper wavelength, the scattering technology can be promoted in detection of thicker GaAs wafer or other materials.
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Zhichao Jia, Zhichao Jia, Zewen Li, Zewen Li, Xueming Lv, Xueming Lv, Xiaowu Ni, Xiaowu Ni, } "Real-time detection of laser-GaAs interaction process", Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 1017307 (12 May 2017); doi: 10.1117/12.2268115; https://doi.org/10.1117/12.2268115
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