12 May 2017 Laser method for simulating the transient radiation effects of semiconductor
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Proceedings Volume 10173, Fourth International Symposium on Laser Interaction with Matter; 101730L (2017) https://doi.org/10.1117/12.2268331
Event: 4th International Symposium on Laser Interaction with Matter, 2016, Chengdu, China
Abstract
In this paper, we demonstrate the laser simulation adequacy both by theoretical analysis and experiments. We first explain the basic theory and physical mechanisms of laser simulation of transient radiation effect of semiconductor. Based on a simplified semiconductor structure, we describe the reflection, optical absorption and transmission of laser beam. Considering two cases of single-photon absorption when laser intensity is relatively low and two-photon absorption with higher laser intensity, we derive the laser simulation equivalent dose rate model. Then with 2 types of BJT transistors, laser simulation experiments and gamma ray radiation experiments are conducted. We found good linear relationship between laser simulation and gammy ray which depict the reliability of laser simulation.
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Mo Li, Peng Sun, Ge Tang, Xiaofeng Wang, Jianwei Wang, Jian Zhang, "Laser method for simulating the transient radiation effects of semiconductor", Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 101730L (12 May 2017); doi: 10.1117/12.2268331; https://doi.org/10.1117/12.2268331
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