12 May 2017 Optical emission of silicon plasma induced by femtosecond double-pulse laser
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Proceedings Volume 10173, Fourth International Symposium on Laser Interaction with Matter; 101730X (2017) https://doi.org/10.1117/12.2267969
Event: 4th International Symposium on Laser Interaction with Matter, 2016, Chengdu, China
Abstract
In this paper, we present a study on the influence of interpulse delay in laser-induced silicon plasma with femtosecond double-pulse, and two subpulses have different laser energies. The meansured optical emission line collected by a lens is the Si (I) at 390.55 nm. The range of double-pulse interpulse delay is from -150 ps to 150 ps. Unlike the femtosecond double pulses with two same energies, the combination of low + high energies can enhance the spectral emission intensity, while the combination of high + low energies probably reduces the spectral line intensity compared with single-pulse femtosecond laser. The results indicate that the interpulse delay is very important for laser-induced breakdown spectroscopy with femtosecond double-pulse to improve the optical emission intensity.
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Anmin Chen, Xiaowei Wang, Dan Zhang, Ying Wang, Suyu Li, Yuanfei Jiang, Mingxing Jin, "Optical emission of silicon plasma induced by femtosecond double-pulse laser", Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 101730X (12 May 2017); doi: 10.1117/12.2267969; https://doi.org/10.1117/12.2267969
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