21 December 2016 Bismuth incorporation into gallium phosphide
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Proceedings Volume 10174, International Symposium on Clusters and Nanomaterials; 101740F (2016) https://doi.org/10.1117/12.2245432
Event: International Symposium on Clusters and Nanomaterials, 2015, Richmond, Virginia, United States
Abstract
Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 °C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.
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Theresa M. Christian, Theresa M. Christian, Daniel A. Beaton, Daniel A. Beaton, Angelo Mascarenhas, Angelo Mascarenhas, Kirstin Alberi, Kirstin Alberi, } "Bismuth incorporation into gallium phosphide", Proc. SPIE 10174, International Symposium on Clusters and Nanomaterials, 101740F (21 December 2016); doi: 10.1117/12.2245432; https://doi.org/10.1117/12.2245432
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